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DMG1013T-7 The Diodes Incorporated DMG1013T-7 is a P-Channel MOSFET with a 20V Drain-Source Voltage and 460mA Continuous Drain Current. It is housed in a SOT-523 package.
Mfr Part #:

DMG1013T-7

Available from 4 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
The Diodes Incorporated DMG1013T-7 is a P-Channel MOSFET with a 20V Drain-Source Voltage and 460mA Continuous Drain Current. It is housed in a SOT-523 package.
Total Stock: 2,326,623 pcs

DMG1013T-7 Available from 4 distributors

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2323020 pcs On Request 1 On Request On Request On Request On Request On Request
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3,000 pcs
3000 pcs On Request 1 On Request On Request 1970-01-01 00:28:54 On Request On Request
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DMG1013T-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Continuous Drain Current (Id)
Current
Drain to Source Voltage (Vdss)
Drain-Source Voltage (Vdss)
Drive Voltage
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg)
Gate Charge (Qg) (Max) @ Vgs
Gate Threshold Voltage (Vgs(th))
Gate-Source Voltage (Vgs)
Halogen Free
Input Capacitance (Ciss)
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
On-Resistance (Rds On)
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

DMG1013T-7 Description

Short technical summary and product information.

The Diodes Incorporated DMG1013T-7 is a P-Channel MOSFET designed for power management applications. It features a maximum Drain-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 460mA at 25°C (Ta).

 

Key electrical specifications include a Gate-Source Voltage (Vgs) of ±6V and a Gate Threshold Voltage (Vgs(th)) of 1V at 250µA. The On-Resistance (Rds(on)) is 700mOhm at 350mA and 4.5V. Input capacitance (Ciss) is 59.76pF at 16V, and Gate Charge (Qg) is 0.622nC at 4.5V.

 

This MOSFET has a maximum power dissipation of 270mW (Ta) and operates within a temperature range of -55°C to 150°C (TJ). The technology used is MOSFET (Metal Oxide).

 

The DMG1013T-7 is supplied in a SOT-523 surface mount package. It is RoHS3 compliant and Lead Free.

DMG1013T-7 Quick Information

Product Type: MOSFET
Canonical Name: DMG1013T-7 P-Channel MOSFET
Subcategory: P-Channel

DMG1013T-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

DMG1013T-7 Features

  • P-Channel MOSFET technology
  • 20V maximum Drain-Source Voltage
  • 460mA continuous Drain Current
  • 700mOhm On-Resistance
  • SOT-523 surface mount package

DMG1013T-7 Applications

  • Ideal for DC-DC converters
  • Suitable for load switches
  • Used in power-management functions

DMG1013T-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum Drain-Source Voltage for the DMG1013T-7?

The maximum Drain-Source Voltage (Vdss) is 20V.

What is the Gate-Source Voltage rating?

The Gate-Source Voltage (Vgs) is ±6V.

What is the Gate Threshold Voltage?

The Gate Threshold Voltage (Vgs(th)) is 1V at 250µA.

What is the On-Resistance of the DMG1013T-7?

The On-Resistance (Rds(on)) is 700mOhm at 350mA and 4.5V.

What is the continuous Drain Current?

The continuous Drain Current (Id) is 460mA.

What is the operating temperature range?

The operating temperature is -55°C to 150°C (TJ).

What package type is the DMG1013T-7 supplied in?

It is supplied in a SOT-523 surface mount package.

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