NTNS3A65PZT5GHW
On Semiconductor
The On Semiconductor NTNS3A65PZT5GHW is a P-Channel MOSFET designed for surface mount applications. It features a 20V drain-source voltage and a continuous drain current of 281mA.
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3,792 pcs
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3792 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The NTNS3166NZT5G is an N-Channel MOSFET manufactured by ON Semiconductor. It is designed for applications requiring a 20V drain-to-source voltage and can handle a continuous drain current of 0.361A at 25°C.
This MOSFET features a surface-mount design, utilizing the SOT-883 (XDFN3) package, which measures 1x0.6mm. Its compact size and surface-mount capability make it suitable for space-constrained electronic designs.
The component is classified under Transistors - FETs, MOSFETs - Single. While specific details on Rds On, Vgs(th), and other electrical parameters are not detailed here, its core specifications indicate suitability for general-purpose switching and amplification tasks where low voltage and moderate current are required.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) for the NTNS3166NZT5G is 20V.
The continuous drain current (Id) at 25°C is 0.361A.
The NTNS3166NZT5G is supplied in a SOT-883 (XDFN3) package.
The NTNS3166NZT5G is a surface mount device.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.