NTNS3A65PZT5GHW The On Semiconductor NTNS3A65PZT5GHW is a P-Channel MOSFET designed for surface mount applications. It features a 20V drain-source voltage and a continuous drain current of 281mA.
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NTNS3A65PZT5GHW

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NTNS3A65PZT5GHW is a P-Channel MOSFET designed for surface mount applications. It features a 20V drain-source voltage and a continuous drain current of 281mA.
✓ Total Stock: 24,000 pcs
$ Price Range: $0.99

NTNS3A65PZT5GHW Available from 1 distributor

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NTNS3A65PZT5GHW Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTNS3A65PZT5GHW Description

Short technical summary and product information.

This On Semiconductor NTNS3A65PZT5GHW is a P-Channel MOSFET with a drain-source voltage (Vdss) of 20V. It is designed for surface mount applications and comes in a compact SOT-883 (XDFN3) package.

 

The MOSFET has a maximum continuous drain current of 281mA (Ta) and a maximum power dissipation of 155mW (Ta). Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 1V at 250µA, a gate charge (Qg) of 1.1 nC at 4.5V, and an input capacitance (Ciss) of 44 pF at 10V. The on-resistance (Rds On) is a maximum of 1.3 Ohm at 200mA and 4.5V.

 

Operating temperature ranges from -55°C to 150°C (TJ). The drive voltage specifications are 1.5V for maximum Rds On and 4.5V for minimum Rds On. This component utilizes MOSFET (Metal Oxide) technology.

 

It is suitable for various electronic designs requiring a small, surface-mountable P-Channel MOSFET with moderate current handling capabilities. The SOT-883 package is ideal for space-constrained applications.

NTNS3A65PZT5GHW Quick Information

Product Type: MOSFET
Canonical Name: On Semiconductor NTNS3A65PZT5GHW P-Channel MOSFET
Subcategory: Single

NTNS3A65PZT5GHW Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTNS3A65PZT5GHW Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTNS3A65PZT5GHW Features

  • P-Channel MOSFET technology.
  • 20V drain-source voltage rating.
  • 281mA continuous drain current.
  • Compact SOT-883 surface mount package.
  • Wide operating temperature range.

NTNS3A65PZT5GHW Applications

  • Suitable for general switching applications.
  • Ideal for power management circuits.
  • Used in portable electronic devices.
  • Applicable in low-voltage systems.

NTNS3A65PZT5GHW FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the NTNS3A65PZT5GHW?

The drain-source voltage (Vdss) is 20V.

What is the maximum continuous drain current?

The maximum continuous drain current is 281mA (Ta).

What is the operating temperature range?

The operating temperature is -55°C to 150°C (TJ).

What package type is the NTNS3A65PZT5GHW in?

It is in a 3-XFDFN package, also known as SOT-883 (XDFN3) with dimensions of 1x0.6.

Is the NTNS3A65PZT5GHW RoHS compliant?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1 Unlimited.

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