| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
50,150 pcs
|
50150 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-channel MOSFET from ON Semiconductor, part number NTMFS5C612NLT1G-UIL5, is designed for power switching applications. It features a maximum drain-source voltage (Vdss) of 60V and a low on-resistance (Rds On) of 1.5mOhm at 50A and 10V gate-source voltage.
The device can handle a continuous drain current of 36A at ambient temperature and up to 235A pulsed at case temperature. Its gate charge (Qg) is a maximum of 91nC at 10V gate-source voltage, with a gate threshold voltage (Vgs(th)) of 2V at 250µA.
Packaged in an 8-PowerTDFN, 5-lead (5-DFN 5x6) configuration, this MOSFET is designed for surface mounting. It operates within a wide temperature range of -55°C to 175°C (TJ). The input capacitance (Ciss) is 6660pF at 25V.
This component is suitable for various power management applications where high current handling and low on-resistance are critical. Its robust construction and specifications make it a reliable choice for demanding designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 60V.
The maximum gate-to-source voltage (Vgs) is ±20V.
The gate threshold voltage (Vgs(th)) is 2V at 250µA.
The maximum gate charge (Qg) is 91 nC at 10V.
The maximum input capacitance (Ciss) is 6660 pF at 25V.
The maximum Rds On is 1.5 milliohms at 50A and 10V Vgs.
The device operates from -55°C to 175°C.