NVGS5120PT1G
On Semiconductor
The ON Semiconductor NVGS5120PT1G is a P-Channel MOSFET with a -60V Drain-to-Source Voltage and a continuous drain current of 1.8A. It features a low Rds On of 111mOhm at 10V.
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7,020 pcs
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| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ON Semiconductor NTGS5120PT1G is a P-Channel MOSFET designed for power switching applications. It features a drain-to-source breakdown voltage (BVds) of -60V and a low on-resistance (RDS(on)) of 111mOhm at 2.9A and 10V gate-source voltage. The device can handle a continuous drain current of up to 1.8A at 85°C ambient temperature and a maximum power dissipation of 600mW.
This MOSFET is housed in a compact TSOP-6 package, making it suitable for space-constrained designs. It operates over a wide temperature range from -55°C to 150°C. The NTGS5120PT1G is Pb-free and halogen-free, complying with RoHS standards.
Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 3V at 250µA, an input capacitance (Ciss) of 942pF at 30V, and a gate charge (Qg) of 18.1nC at 10V. The maximum gate-to-source voltage is ±20V.
Applications include high-side load switching and general power switching in printers and communication equipment. Its robust design and small footprint make it a versatile component for various electronic systems.
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Estimated market price range - modelled values for guidance only, not live distributor offers.
-60 V
-2.9 A
SOT-23-6 Thin, TSOP-23-6
-55°C ~ 150°C
RoHS3 Compliant