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NVGS5120PT1G The ON Semiconductor NVGS5120PT1G is a P-Channel MOSFET with a -60V Drain-to-Source Voltage and a continuous drain current of 1.8A. It features a low Rds On of 111mOhm at 10V.
Mfr Part #:

NVGS5120PT1G

Available from 8 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVGS5120PT1G is a P-Channel MOSFET with a -60V Drain-to-Source Voltage and a continuous drain current of 1.8A. It features a low Rds On of 111mOhm at 10V.
✓ Total Stock: 101,850 pcs
$ Price Range: $0.58

NVGS5120PT1G Available from 8 distributors

✓ Authorised
✓ Non-Authorised
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

NVGS5120PT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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NVGS5120PT1G Description

Short technical summary and product information.

The NVGS5120PT1G from ON Semiconductor is a P-Channel MOSFET designed for power switching applications. It offers a maximum Drain-to-Source Voltage (Vdss) of -60V and a continuous drain current of 1.8A at 25°C ambient temperature. The device exhibits a low on-resistance (Rds On) of 111mOhm at a gate-source voltage of 10V, and 142mOhm at 4.5V, making it efficient for load switching.

 

This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It is housed in a compact TSOP-6 (SOT-23-6 Thin) surface mount package, suitable for space-constrained designs. The NVGS5120PT1G is Pb-free and Halogen-free, complying with RoHS standards.

 

Key electrical characteristics include a gate threshold voltage of 3V at 250µA, an input capacitance of 942pF at 30V, and a gate charge of 18.1nC at 10V. The maximum power dissipation is rated at 600mW at 25°C ambient temperature.

NVGS5120PT1G Quick Information

Product Type: MOSFET
Series: NTGS5120PT1G
Canonical Name: NVGS5120PT1G P-Channel MOSFET
Subcategory: Single

NVGS5120PT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NVGS5120PT1G Estimated Pricing

Qty Low High
1+ $0.58 $0.58

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVGS5120PT1G Features

  • P-Channel MOSFET with -60V Vdss.
  • Continuous drain current of 1.8A.
  • Low Rds On of 111mOhm at 10V.
  • Compact TSOP-6 surface mount package.
  • Pb-free and Halogen-free compliance.

NVGS5120PT1G Applications

  • Ideal for high-side load switching.
  • Suitable for power switching circuits.
  • Used in communication equipment.
  • Power switch for printers.

NVGS5120PT1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the Drain-to-Source Voltage (Vdss) for the NVGS5120PT1G?

The Drain-to-Source Voltage (Vdss) is -60 V.

What is the maximum continuous drain current for the NVGS5120PT1G?

The maximum continuous drain current is 1.8A at 25°C ambient temperature.

What is the maximum Rds On for the NVGS5120PT1G?

The maximum Rds On is 111mOhm at a drain current of 2.9A and gate-source voltage of 10V.

What is the operating temperature range of the NVGS5120PT1G?

The operating junction and storage temperature range is -55°C to 150°C.

Is the NVGS5120PT1G RoHS compliant?

Yes, the NVGS5120PT1G is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the NVGS5120PT1G?

The Moisture Sensitivity Level (MSL) is 1.

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