| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3 pcs
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3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Power Dissipation | |
| SVHC Present |
The NTE Electronics NTE341 is a Silicon NPN Transistor designed for RF power output applications. It comes in a TO-39 package, suitable for through-hole mounting.
Key electrical characteristics include a minimum Collector Emitter Breakdown Voltage of 18V and a maximum Collector Current of 640mA. The device also features a typical DC Current Gain of 180 and a maximum Collector Cutoff Current of 100nA. The Emitter Base Breakdown Voltage is a minimum of 4V.
This transistor is RoHS3 Compliant and has a Moisture Sensitivity Level (MSL) of 1 Unlimited. Its REACH status is unaffected. The maximum power dissipation at 25°C is 250mW.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum Collector Emitter Breakdown Voltage is 18V.
The maximum Collector Current is 640mA.
The typical DC Current Gain is 180.
The NTE341 transistor comes in a TO-39 package.
The NTE341 is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.