| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NTE338 is a Silicon NPN Transistor manufactured by NTE Electronics, Inc. This component is classified as New Old Stock (NOS) and is noted as no longer available for export. It is designed for use as an RF Power Amplifier Driver.
Key electrical characteristics include a maximum Collector Current (IC) of 3.5A and a maximum Base Current (IB) of 0.5A. The Collector-Emitter Voltage (VCEO) is rated at 24V, with a Collector-Base Voltage (VCB) of 48V, and an Emitter-Base Voltage (VEB) of 4V. The Total Device Dissipation (PD) is 50W.
Thermal specifications indicate an Operating Junction Temperature Range (TJ) and Storage Temperature Range (Tstg) of -65°C to +200°C. The component is suitable for through-hole mounting.
This transistor is part of the NTE Electronics product line, specifically within the NPN transistor category. Its New Old Stock status suggests it may be a legacy component.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (IC) for the NTE338 transistor is 3.5A.
The collector-emitter voltage (VCEO) for the NTE338 transistor is 24V.
The total device dissipation (PD) for the NTE338 transistor is 50W.
The operating junction temperature range for the NTE338 transistor is -65°C to +200°C.
The RoHS status of the NTE338 transistor is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the NTE338 transistor is 1 Unlimited.
