| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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113 pcs
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113 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | 02+ | On Request | On Request | |
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N3810 is a PNP silicon transistor manufactured by Motorola Semiconductor, designed for general-purpose applications. It is housed in a hermetically sealed TO-78 metal can package, making it suitable for various environmental conditions.
Key electrical characteristics include a collector-emitter breakdown voltage (VCEO) of 60V and a continuous collector current (IC) of 50mA. The device also features a maximum power dissipation of 300mW at 25°C (one section) and operates within a junction temperature range of -65°C to +200°C.
This transistor is also available in chip configuration and can be screened and processed per MIL-PRF-19500 specifications, with qualification levels including JAN, JANTX, JANTXV, and JANS. Radiation testing is available upon request. Its robust design and available high-reliability options make it suitable for demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (V(BR)CEO) for the 2N3810 is a minimum of 60V when the collector current is 100 µA.
The 2N3810 has a continuous collector current (IC) rating of 50mA.
The operating junction temperature range for the 2N3810 is -65°C to +200°C.
The 2N3810 is supplied in a hermetically sealed TO-78 metal can package.
The RoHS status for the 2N3810 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the 2N3810 is 1 Unlimited.
The REACH status for the 2N3810 is REACH Unaffected.