MMFT6661LT1G
On Semiconductor
The MMFT6661LT1G is an N-Channel Enhancement-Mode FET Transistor from ON Semiconductor. It features a 90V voltage rating and a 0.5A current capability.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2 pcs
|
2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Voltage |
The NTE2535 is a PNP silicon transistor manufactured by NTE Electronics. It is designed for high current switching applications and features a low collector emitter saturation voltage.
Key electrical specifications include a maximum collector current of 12A and a maximum collector base voltage of 90V. The transistor is housed in a TO-3P package, indicating its suitability for applications requiring robust thermal management.
This component is often used in applications such as relay drivers, high-speed inverters, and converters where efficient switching and power handling are critical. Its complementary nature with NPN transistors allows for versatile circuit designs.
The NTE2535 is specified with a Moisture Sensitivity Level (MSL) of 1, indicating it has unlimited shelf life under standard conditions. Its RoHS status is listed as RoHS3 Compliant and REACH status as REACH Unaffected, though these are noted with low confidence.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the NTE2535 is 12A.
The NTE2535 has a maximum collector base voltage of 90V.
The NTE2535 transistor is supplied in a TO-3P package.