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MMFT6661LT1G The MMFT6661LT1G is an N-Channel Enhancement-Mode FET Transistor from ON Semiconductor. It features a 90V voltage rating and a 0.5A current capability.
Mfr Part #:

MMFT6661LT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MMFT6661LT1G is an N-Channel Enhancement-Mode FET Transistor from ON Semiconductor. It features a 90V voltage rating and a 0.5A current capability.
✓ Total Stock: 965 pcs
$ Price Range: $2.93

MMFT6661LT1G Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Bristol Electronics ✓
Non-Authorised Inventory information
965 pcs
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965 pcs On Request 1 On Request On Request On Request On Request On Request
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MMFT6661LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Halogen Free
Mounting Type
SVHC Present
Termination Style
Voltage
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MMFT6661LT1G Description

Short technical summary and product information.

The MMFT6661LT1G is a medium power field-effect transistor manufactured by ON Semiconductor. This N-Channel Enhancement-Mode Silicon Gate TMOS FET is designed for surface mount applications and comes in a SOT-223 package.

 

Key electrical characteristics include a maximum voltage rating of 90V and a continuous drain current of 0.5A. Its enhancement-mode operation makes it suitable for various switching applications.

 

This transistor is designed for high speed, low loss power switching. The SOT-223 package offers a compact footprint for space-constrained designs. Its surface mount capability facilitates automated assembly processes.

MMFT6661LT1G Quick Information

Product Type: FET Transistor
Series: Medium Power
Canonical Name: MMFT6661LT1G N-Channel Enhancement-Mode FET Transistor
Subcategory: N-Channel

MMFT6661LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: No

MMFT6661LT1G Estimated Pricing

Qty Low High
1+ $2.93 $2.93

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMFT6661LT1G Features

  • N-Channel Enhancement-Mode MOSFET design.
  • Rated for 90V maximum drain-source voltage.
  • Supports 0.5A continuous drain current.
  • Surface mount SOT-223 package.
  • Silicon gate TMOS technology.

MMFT6661LT1G Applications

  • Used in power management circuits.
  • Suitable for load switching applications.
  • Ideal for DC-DC converter designs.
  • Applicable in low-power motor control.
  • Used in portable electronic devices.

MMFT6661LT1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the MMFT6661LT1G?

90V.

What is the maximum continuous drain current?

0.5A.

What package is the MMFT6661LT1G available in?

SOT-223.

What is the mounting type?

Surface Mount.

What type of transistor is the MMFT6661LT1G?

N-Channel Enhancement-Mode MOSFET.

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