| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NTE2313 is a high-speed switching NPN silicon transistor manufactured by NTE Electronics. It is designed for applications requiring fast switching characteristics and robust performance.
This transistor features a maximum collector-emitter breakdown voltage of 450V and can handle a continuous collector current of up to 2A. Its DC current gain (hFE) is a minimum of 30 at 100mA and 5V. The saturation voltage (Vce Sat) is a maximum of 1V at 200mA and 1A, indicating efficient switching.
With an operating frequency of 4MHz, the NTE2313 is suitable for various switching circuits. It operates within a temperature range of -65°C to 150°C (TJ).
The transistor comes in a TO-220-3 package and is designed for through-hole mounting, making it convenient for integration into circuit boards. The TO-220 package is standard for power applications, offering good thermal dissipation.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NTE2313 is an NPN silicon transistor.
The NTE2313 has a maximum collector-emitter breakdown voltage of 450V.
The NTE2313 can handle a continuous current of 2A.
The NTE2313 operates between -65°C and 150°C (TJ).
The NTE2313 is supplied in a TO-220-3 package.
The NTE2313 is designed for through-hole mounting.