BUX85G NPN power transistor for high-voltage switching applications. Rated 450V VCEO, 2A IC, 50W power dissipation in TO-220 package.
Mfr Part #:

BUX85G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
NPN power transistor for high-voltage switching applications. Rated 450V VCEO, 2A IC, 50W power dissipation in TO-220 package.
✓ Total Stock: 1,120 pcs
$ Price Range: $0.66

BUX85G Available from 1 distributor

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✓ Non-Authorised
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1,120 pcs
1120 pcs On Request 1 On Request On Request On Request On Request On Request

BUX85G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Termination Style
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BUX85G Description

Short technical summary and product information.

The BUX85G is a high-voltage NPN silicon power transistor from onsemi, specifically designed for switch-mode power applications such as converters, inverters, switching regulators, and motor control systems. It features a collector-emitter sustaining voltage (VCEO(sus)) of 450V, a continuous collector current (IC) of 2A, and a peak collector current of 3A. The device can dissipate up to 50W at a case temperature of 25°C, with a derating factor of 0.4W/°C above 25°C.

 

Key electrical characteristics include a minimum DC current gain (hFE) of 30 at Ic=100mA, Vce=5V, a maximum collector-emitter saturation voltage of 1V at Ib=200mA, Ic=1A, and a minimum transition frequency (fT) of 4MHz at Ic=500mA, Vce=10V. The switching speeds are specified with typical turn-on time of 0.3µs, storage time of 2µs, and fall time of 0.3µs under test conditions Vcc=250V, Ic=1A.

 

The BUX85G is housed in the industry-standard TO-220-3 package (TO-220) with through-hole mounting, providing a junction-to-case thermal resistance of 2.5°C/W and junction-to-ambient of 62.5°C/W. The operating junction temperature range is -65°C to 150°C. The device is Pb-Free and RoHS compliant, making it suitable for environmentally conscious designs.

BUX85G Quick Information

Product Type: Single Bipolar Junction Transistor (BJT)
Series: BUX85
Canonical Name: BUX85G NPN Bipolar Power Transistor, 450V VCEO, 2A IC, TO-220
Subcategory: NPN

BUX85G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BUX85G Estimated Pricing

Qty Low High
50+ $0.66 $0.66

Estimated market price range - modelled values for guidance only, not live distributor offers.

BUX85G Features

  • NPN power transistor, 450V VCEO, 2A IC.
  • 50W power dissipation in TO-220 package.
  • High-speed switching with 4MHz transition frequency.
  • Pb-Free and RoHS compliant.

BUX85G Applications

  • Ideal for switch-mode power supply designs.
  • Used in motor control and inverter circuits.
  • Suitable for high-voltage DC-DC converters.
  • Applied in switching regulators and power controls.

BUX85G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the BUX85G?

The collector-emitter sustaining voltage (VCEO(sus)) is 450V.

What package is the BUX85G available in?

The BUX85G is housed in a TO-220-3 (TO-220) through-hole package.

What is the operating temperature range?

The operating junction temperature range is -65°C to 150°C.

Is the BUX85G RoHS compliant?

Yes, the BUX85G is Pb-Free and RoHS compliant as per the datasheet.

What is the maximum collector current?

The continuous collector current is 2A, with a peak current of 3A.

What is the power dissipation rating?

The device can dissipate up to 50W at a case temperature of 25°C.

What are the thermal resistance values?

Junction-to-case thermal resistance is 2.5°C/W, and junction-to-ambient is 62.5°C/W.

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