| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
541 pcs
|
541 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Power Dissipation |
The NTE180 is a PNP silicon bipolar transistor designed for use in high power audio amplifiers. It is housed in a TO-3 package.
Key electrical specifications include a Collector-Emitter Voltage (Vceo) of -90V and a maximum DC Collector Current (Ic) of -30A. The device offers a high DC Current Gain (hFE) ranging from 25 to 100 at an IC of 7.5A. Power Dissipation (Pd) is rated at 200W.
This transistor is suitable for applications requiring robust power handling capabilities. Its complementary nature with the NTE181 (NPN) makes it ideal for complementary audio amplifier designs aiming for up to 100 watts music power per channel.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-90 V
TO-3
100 V
4 V
-30 A
200 W
2 MHz