TPCC8065-H
Toshiba
The Toshiba TPCC8065-H is a Silicon N-Channel MOSFET with a 30V breakdown voltage and a continuous drain current of 13A. It offers a low on-resistance of 0.0114 Ohm.
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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| Power Dissipation |
The NTE1399 is a dual power amplifier integrated circuit manufactured by NTE Electronics. This component is designed to provide significant power output, with a power dissipation rating of 18W. Its dual-channel capability makes it suitable for stereo audio applications or other configurations requiring two independent amplification stages.
As an integrated circuit, the NTE1399 simplifies circuit design by combining multiple amplification components into a single package. Its primary function is to increase the amplitude of an input signal, making it suitable for driving speakers or other loads. The 18W power dissipation indicates its capacity for handling moderate to high power audio signals.
While specific application details and operating parameters are best confirmed through the datasheet, components like the NTE1399 are commonly employed in consumer electronics, public address systems, and automotive audio systems where robust amplification is required.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NTE1399 has a power dissipation of 18W.
The NTE1399 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the NTE1399 is 1 Unlimited.
The NTE1399 is REACH Unaffected.