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26,800 pcs
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26800 pcs | On Request | 1 | On Request | On Request | 1249+ | On Request | On Request |
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The Toshiba TPCC8065-H is a high-performance Silicon N-Channel MOSFET designed for various electronic applications. It features a drain-source breakdown voltage (BVDSS) of 30V and can handle a continuous drain current (ID) of up to 13A at 25°C.
This MOSFET exhibits a low on-resistance (RDS(ON)) of typically 0.0117 Ohm and a maximum of 0.0145 Ohm at VGS = 4.5V and TA = 25°C. The maximum power dissipation (PD) is rated at 18W. Its thermal resistance junction-to-ambient (RthJA) is 65.7 C/W, and junction-to-case (RthJC) is 6.94 C/W.
The TPCC8065-H is housed in a TSON Advance surface-mount package, measuring 3.30 x 3.30mm with 8 pins. This compact package is suitable for space-constrained designs.
Key electrical parameters include typical gate-source charge (QGS) of 4.4nC, gate-drain charge (QGD) of 2.1nC, and total gate charge (QG) of 20nC. These values are important for driving the MOSFET efficiently.
The maximum drain-source breakdown voltage (BVDSS) for the TPCC8065-H is 30V.
The typical on-resistance (RDS(ON)) of the TPCC8065-H is 0.0117 Ohm at VGS = 4.5V and TA = 25°C.
The maximum continuous drain current (ID) for the TPCC8065-H is 13A at TA = 25°C.
The TPCC8065-H MOSFET is supplied in a TSON Advance surface-mount package.
The RoHS status of the TPCC8065-H is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the TPCC8065-H is 1 Unlimited.
The REACH status for the TPCC8065-H is REACH Unaffected.