NSV60601MZ4T1G
On Semiconductor
The ON Semiconductor NSV60601MZ4T1G is an NPN transistor designed for low voltage, high speed switching applications. It features a low VCE(sat) and high current gain capability.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type |
The NTA4151PT1G is a single P-Channel MOSFET designed for various applications including high-side load switching and DC-DC conversion. It operates with a Drain-to-Source Voltage (VDSS) of -20V and a Gate-to-Source Voltage (VGS) of ±6.0V. The device offers low RDS(on) for improved efficiency and longer battery life, with typical values as low as 0.26 Ω at -4.5V VGS and -350 mA ID.
This MOSFET is available in small outline packages, specifically SC-75 and SC-89, with dimensions of 1.6 x 1.6 mm. It features an ESD protected gate, rated at 1800V (HBM). The device is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant, making it suitable for environmentally conscious designs.
Key electrical characteristics include a continuous drain current of -760 mA and a pulsed drain current of ±1000 mA. Thermal resistance is rated at 415 °C/W for the SC-75 package and 400 °C/W for the SC-89 package under steady-state conditions. The operating and storage temperature range is from -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-20 V
0.26 Ω
-760 mA
SC-75 and SC-89
Yes, it is RoHS3 Compliant.
-55 to 150 °C