NSVMUN5336DW1T1G The NSVMUN5336DW1T1G from On Semiconductor is a complementary digital transistor featuring a pre-biased monolithic bias resistor network. It offers a 50V collector-emitter voltage and 100mA continuous collector current.
Mfr Part #:

NSVMUN5336DW1T1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NSVMUN5336DW1T1G from On Semiconductor is a complementary digital transistor featuring a pre-biased monolithic bias resistor network. It offers a 50V collector-emitter voltage and 100mA continuous collector current.
Total Stock: 93,000 pcs
$ Price Range: $0.99

NSVMUN5336DW1T1G Available from 1 distributor

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NSVMUN5336DW1T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector-Base Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Input Voltage (Maximum)
Mounting Type
Pb-Free
Power
Resistor
Storage Temperature
Supplier Device Package
Tape & Reel
Total Device Dissipation
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

NSVMUN5336DW1T1G Description

Short technical summary and product information.

The NSVMUN5336DW1T1G is a digital transistor from On Semiconductor, designed to replace single transistors and external resistor bias networks. This device integrates a single transistor with a monolithic bias network, consisting of a series base resistor and a base-emitter resistor, thereby reducing system cost and board space.

 

Key electrical characteristics include a collector-emitter voltage of 50V and a continuous collector current of 100mA. The transistor type is 1 NPN, 1 PNP - Pre-Biased (Dual), with a base-emitter resistor value of 100kΩ. It exhibits a minimum DC current gain (hFE) of 80 at 5mA, 10V, and a maximum Vce saturation of 250mV at 300µA, 10mA.

 

This component is supplied in a SOT-363 package, suitable for surface mount applications. The device is rated for a total power dissipation of 187mW at 25°C (one junction heated). It is also Pb-Free and Halogen Free, compliant with RoHS standards.

 

The NSVMUN5336DW1T1G simplifies circuit design, reduces board space, and lowers component count, making it suitable for various digital applications where integrated biasing is beneficial.

NSVMUN5336DW1T1G Quick Information

Product Type: Digital Transistor
Canonical Name: NPN and PNP Transistors with Monolithic Bias Resistor Network
Subcategory: Pre-Biased Transistor Array

NSVMUN5336DW1T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NSVMUN5336DW1T1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSVMUN5336DW1T1G Features

  • Integrated NPN and PNP transistors.
  • Monolithic bias resistor network included.
  • 50V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • SOT-363 surface mount package.

NSVMUN5336DW1T1G Applications

  • Simplifies digital circuit designs.
  • Reduces component count on PCBs.
  • Ideal for space-constrained applications.
  • Replaces discrete transistor and resistor networks.

NSVMUN5336DW1T1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NSVMUN5336DW1T1G?

The maximum collector-emitter voltage (VCEO) for the NSVMUN5336DW1T1G is 50Vdc.

What is the continuous collector current rating?

The continuous collector current (IC) for this device is 100mAdc.

What is the package type for this transistor array?

This transistor array is supplied in a SOT-363 package, also known as SC-88 or SC70-6.

What is the base-emitter resistor value?

The base-emitter resistor value is 100kΩ.

What is the RoHS status of the NSVMUN5336DW1T1G?

The NSVMUN5336DW1T1G is RoHS3 Compliant.

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