MUN5236T1G
On Semiconductor
The MUN5236T1G is an NPN pre-biased transistor from On Semiconductor. It features a 50V collector-emitter voltage and 100mA continuous collector current.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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108,000 pcs
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108000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor NSVMUN5236T1G is a digital transistor featuring a monolithic bias resistor network, simplifying circuit design and reducing component count. This NPN pre-biased transistor operates with a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA.
Key electrical characteristics include a minimum DC current gain (hFE) of 80 at 5mA/10V and a Vce saturation of 250mV at 300µA/10mA. The integrated resistors have nominal values of 100 kΩ for both the base resistor (R1) and the base-emitter resistor (R2).
This device is supplied in a compact SC-70, SOT-323 package, suitable for surface mount applications. It is designed to replace a single transistor and its external bias network, offering benefits such as reduced board space and component count. The NSVMUN5236T1G is RoHS3 compliant, Pb-Free, and Halogen Free.
It is suitable for applications where a simplified digital input is required, integrating the bias network directly into the transistor package.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the NSVMUN5236T1G is 50 Vdc.
The continuous collector current (IC) rating for the NSVMUN5236T1G is 100 mAdc.
The power dissipation (PD) at 25°C for the NSVMUN5236T1G is 200 mW.
The minimum DC current gain (hFE) is 80 at 5mA collector current and 10V collector-emitter voltage.
The NSVMUN5236T1G is supplied in an SC-70-3 (SOT-323) package.
Yes, the NSVMUN5236T1G is RoHS3 compliant.
The Moisture Sensitivity Level (MSL) for the NSVMUN5236T1G is 1.