| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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111,000 pcs
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111000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Halogen Free | |
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The MUN5236T1G is a digital transistor from On Semiconductor, featuring an integrated monolithic bias resistor network. This NPN pre-biased transistor is designed to replace a single device and its external resistors, simplifying circuit design and reducing board space.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50V and a continuous collector current (IC) of 100mA. The device has a maximum power dissipation of 200mW at 25°C ambient temperature. It also offers a DC current gain (hFE) of at least 80 at 5mA/10V and a saturation voltage (Vce(sat)) of 250mV maximum at 300µA/10mA.
The internal bias network consists of two resistors, R1 and R2, each with a nominal value of 100 kΩ. This configuration simplifies the interface for digital logic signals.
The MUN5236T1G is supplied in a compact SC-70-3 (SOT-323) surface-mount package, making it suitable for space-constrained applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MUN5236T1G is 50 Vdc.
The continuous collector current (IC) rating for the MUN5236T1G is 100 mAdc.
The power dissipation is 200 mW at an ambient temperature of 25°C.
The MUN5236T1G is supplied in an SC-70-3 (SOT-323) package.
Yes, the MUN5236T1G is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
