RN1401.LFT
Toshiba
The Toshiba RN1401.LFT is an NPN bipolar transistor designed for SMD mounting. It features a 50V collector-emitter voltage and 0.1A collector current.
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243,000 pcs
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243000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The On Semiconductor NSVMSD601-RT1G is an NPN bipolar transistor designed for various electronic applications. It offers a maximum collector-emitter voltage of 50V and a continuous collector current of 0.1A.
With a power dissipation rating of 0.2W, this transistor is suitable for low-power applications. The current gain ranges from 210 to 340, providing amplification capabilities.
This component is housed in an SC59 package, designed for surface mounting (SMD). The tape and reel packaging is suitable for automated assembly processes. Its application in the automotive industry highlights its reliability and performance under demanding conditions.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage is 50V.
The maximum collector current is 0.1A.
The power dissipation is 0.2W.
The current gain ranges from 210 to 340.
The component is supplied in an SC59 package.
The transistor is designed for SMD mounting.
The component is supplied on tape and reel.