| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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112,000 pcs
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112000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Halogen Free | |
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| Resistor | |
| Supplier Device Package | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The NSVDTC144EM3T5G from ON Semiconductor is a digital transistor featuring a monolithic bias resistor network, simplifying circuit design by integrating a single transistor with two resistors. This NPN pre-biased transistor operates with a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA.
Key electrical characteristics include a maximum input forward voltage of 40V and a maximum input reverse voltage of 10V. The device has a typical DC current gain (hFE) of 80 at 5mA and 10V, with a Vce saturation of 250mV at 300µA and 10mA. It includes integrated resistors with nominal values of 47 kΩ for both the series base resistor (R1) and the base-emitter resistor (R2).
This component is housed in a compact SOT-723 surface-mount package, making it suitable for applications where board space is limited. The device is rated for a power dissipation of 260 mW at 25°C ambient temperature. It is Pb-free and Halogen-free, complying with RoHS3 standards.
The NSVDTC144EM3T5G is designed to replace single devices and their external bias networks, reducing component count and system cost. Its features make it a versatile component for various digital applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 50 Vdc.
The continuous collector current is 100 mAdc.
The NSVDTC144EM3T5G is supplied in a SOT-723 package.
The power dissipation is 260 mW at 25°C.
The integrated resistors R1 and R2 both have a nominal value of 47 kΩ.
Yes, the NSVDTC144EM3T5G is RoHS3 compliant.