| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
67,750 pcs
|
67750 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NSVBC124XPDXV6T1G from On Semiconductor is a complementary digital transistor series designed to replace single devices and external resistor bias networks. This Bias Resistor Transistor (BRT) integrates a single transistor with a monolithic bias network, consisting of a series base resistor and a base-emitter resistor, thereby reducing system cost and board space.
This specific model operates with a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. It includes a pre-biased resistor network with a nominal value of 47kΩ. The device offers a minimum DC current gain (hFE) of 80 at 5mA and 10V, with a Vce saturation of 250mV maximum at 1mA and 10mA.
Designed for surface mounting, the NSVBC124XPDXV6T1G comes in a compact SOT-563 package. Its integrated resistor network simplifies circuit design and reduces component count, making it suitable for various digital applications where space and cost efficiency are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 50 Vdc.
The continuous collector current is 100 mAdc.
The bias resistor value is 47kΩ.
The transistor array is available in SOT-563 and SOT-666 packages.
It is designed for surface mount installation.
