DistyParts Icon
NSVBC114YPDXV6T1G The ON Semiconductor NSVBC114YPDXV6T1G is a pre-biased NPN/PNP transistor array designed for simplified circuit design. It comes in a compact SOT-563 package.
Mfr Part #:

NSVBC114YPDXV6T1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NSVBC114YPDXV6T1G is a pre-biased NPN/PNP transistor array designed for simplified circuit design. It comes in a compact SOT-563 package.
✓ Total Stock: 44,000 pcs
$ Price Range: $0.99

NSVBC114YPDXV6T1G Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
44,000 pcs
On Request
44000 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

NSVBC114YPDXV6T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Power
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
View Similar Products (0)

NSVBC114YPDXV6T1G Description

Short technical summary and product information.

This ON Semiconductor NSVBC114YPDXV6T1G is a complementary bias resistor transistor (BRT) featuring an integrated monolithic bias network. It contains one NPN and one PNP transistor, designed to replace a single device and its external bias resistors, thereby reducing system cost and board space.

 

Key electrical specifications include a collector-emitter voltage of 50V, a continuous collector current of 100mA, and a power dissipation of 500mW. The device incorporates a base-emitter resistor (R2) with a nominal value of 47kΩ. It also specifies a DC current gain (hFE) of 80 minimum at 5mA/10V and a Vce saturation of 250mV maximum at 300µA/10mA.

 

The transistor array is housed in a SOT-563 surface mount package, making it suitable for applications where space is a constraint. It is Pb-Free and Halogen Free, complying with modern environmental standards.

NSVBC114YPDXV6T1G Quick Information

Product Type: Pre-Biased Transistor Array
Canonical Name: NPN/PNP Pre-Biased Transistor Array
Subcategory: Pre-Biased

NSVBC114YPDXV6T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NSVBC114YPDXV6T1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSVBC114YPDXV6T1G Features

  • Integrated NPN and PNP transistors.
  • Replaces discrete transistors and resistors.
  • 50V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • Compact SOT-563 surface mount package.

NSVBC114YPDXV6T1G Applications

  • Simplifies digital logic circuits.
  • Reduces component count and board space.
  • Ideal for low-power switching applications.
  • Suitable for portable electronic devices.

NSVBC114YPDXV6T1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NSVBC114YPDXV6T1G?

The maximum collector-emitter voltage is 50 Vdc.

What is the continuous collector current rating?

The continuous collector current is 100 mAdc.

What is the package type for this transistor array?

This transistor array is supplied in a SOT-563 package.

What is the integrated base-emitter resistor value?

The integrated base-emitter resistor (R2) has a nominal value of 47kΩ.

What is the power dissipation rating?

The power dissipation rating is 500mW.

Home
Account

Categories