| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
39,000 pcs
|
39000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Tape & Reel |
The NSV9435T1G from ON Semiconductor is a PNP Silicon Transistor suitable for applications requiring high current bias. It offers a collector-emitter sustaining voltage (VCEO) of 30V and a continuous collector current (IC) of up to 3.0 Adc.
Key electrical characteristics include a high DC current gain (hFE) of 125 minimum at 0.8 Adc and 90 minimum at 3.0 Adc. The low collector-emitter saturation voltage (VCE(sat)) is 0.275 Vdc maximum at 1.2 Adc and 0.55 Vdc maximum at 3.0 Adc.
This device is packaged in a SOT-223 surface mount package. It is AEC-Q101 Qualified and PPAP Capable, with the NSV prefix indicating suitability for automotive and other applications with unique site and control change requirements. The transistor is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
Maximum power dissipation is rated at 3.0W at 25°C case temperature. It operates within a junction temperature range of -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter sustaining voltage (VCEO) is a minimum of 30 Vdc.
The continuous collector current (IC) is rated at 3.0 Adc.
The minimum DC current gain (hFE) is 125 at an IC of 0.8 Adc.
The minimum DC current gain (hFE) is 90 at an IC of 3.0 Adc.
The maximum collector-emitter saturation voltage (VCE(sat)) is 0.275 Vdc at an IC of 1.2 Adc.
The maximum collector-emitter saturation voltage (VCE(sat)) is 0.55 Vdc at an IC of 3.0 Adc.
The NSV9435T1G is available in a SOT-223 surface mount package.