| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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8,000 pcs
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8000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor NSBC114YDXV6T5G is a dual NPN pre-biased transistor, part of the Bias Resistor Transistor (BRT) series. This device integrates two NPN transistors with monolithic bias resistor networks, eliminating the need for external resistors and reducing board space and component count.
Key electrical specifications include a maximum collector-emitter voltage of 50Vdc and a continuous collector current of 100mAdc. It features a DC current gain (hFE) of 80 minimum at 5mA/10V and a Vce saturation of 250mV maximum at 300µA/10mA. The integrated resistor value is 47kΩ.
This transistor is housed in a compact SOT-563 surface mount package, making it suitable for space-constrained applications. The device is rated for 500mW power dissipation.
The NSBC114YDXV6T5G is designed to simplify circuit design by replacing a single device and its external resistor bias network. Its integrated nature contributes to reduced system cost and smaller board footprints.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 50 Vdc.
The continuous collector current is 100 mAdc.
The integrated resistor value is 47 kΩ.
It is supplied in a SOT-563 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.
