| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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27,580 pcs
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27580 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Halogen Free | |
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| Resistor | |
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| Vce Saturation (Max) @ Ib, Ic | |
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The On Semiconductor NSBC144EDXV6T1G is a dual NPN bias resistor transistor (BRT) designed to replace a single transistor with its external bias network, reducing system cost and board space. This device integrates two NPN transistors with monolithic bias resistors (R1 = 47 kΩ, R2 = 47 kΩ).
Key electrical specifications include a maximum collector-emitter voltage of 50 Vdc and a continuous collector current of 100 mAdc. It offers a minimum DC current gain (hFE) of 80 at 5mA and 10V, with a Vce saturation of 250mV maximum at 300µA and 10mA. The maximum input forward voltage is 40 Vdc, and the maximum input reverse voltage is 10 Vdc.
This transistor is housed in a SOT-563 surface mount package. It is RoHS compliant, Pb-Free, and Halogen Free. The device is suitable for applications requiring simplified circuit design and reduced component count.
Thermal characteristics include a total device dissipation of 187mW (one junction heated) and 250mW (both junctions heated) at 25°C ambient temperature. The junction-to-ambient thermal resistance is 670°C/W (one junction heated) and 490°C/W (both junctions heated).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 50 Vdc.
The continuous collector current is 100 mAdc.
The device has integrated base resistor R1 and base-emitter resistor R2, both with a value of 47 kΩ.
This transistor is available in SOT-563 and SOT-666 packages.
Yes, this component is RoHS3 Compliant.