NSBC114EDXV6T5G
On Semiconductor
The NSBC114EDXV6T5G is a dual NPN pre-biased transistor from On Semiconductor. It features a 50V collector-emitter voltage and 100mA continuous collector current.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,704,000 pcs
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1704000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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21,020 pcs
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21020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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20,000 pcs
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20000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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8,189 pcs
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8189 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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3,200 pcs
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3200 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request | |
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570 pcs
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570 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The On Semiconductor NSBC114EDXV6T1G is a dual NPN bias resistor transistor designed to simplify circuit design and reduce board space. It integrates a single transistor with a monolithic bias network, consisting of a series base resistor and a base-emitter resistor.
This device features a collector-emitter voltage of 50Vdc and a continuous collector current of 100mAdc. It includes integrated resistors with nominal values of 10kΩ for both R1 (base) and R2 (base-emitter).
The NSBC114EDXV6T1G is housed in a SOT-563 surface mount package. It is suitable for applications requiring reduced component count and simplified board layout. The transistor type is 2 NPN - Pre-Biased (Dual), with a minimum DC current gain (hFE) of 35 at 5mA and 10V, and a Vce saturation of 250mV at 300µA and 10mA.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage is 50 Vdc.
The continuous collector current is 100 mAdc.
The NSBC114EDXV6T1G is available in SOT-563 and SOT-666 packages.
The NSBC114EDXV6T1G has integrated resistors of 10kΩ for both R1 and R2.
The minimum DC current gain (hFE) is 35 at 5mA and 10V.