| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,704,000 pcs
|
1704000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Halogen Free | |
| Lead Spacing | |
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| Resistor | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
This dual NPN pre-biased transistor, part number NSBC114EDXV6T5G from On Semiconductor, integrates a single transistor with a monolithic bias network. This design simplifies circuit design, reduces board space, and lowers component count by eliminating external resistors.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50Vdc and a continuous collector current (IC) of 100mAdc. The device also features a nominal 10kΩ resistor network. The saturation voltage (Vce Sat) is a maximum of 250mV at 300µA, 10mA, and the minimum DC current gain (hFE) is 35 at 5mA, 10V.
The transistor is housed in a SOT-563 surface mount package. It is designed to replace a single device and its external resistor bias network, offering a more integrated solution for various electronic applications.
This series is Pb-Free and Halogen Free, complying with RoHS standards. The device is suitable for applications requiring simplified design and reduced component count.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 50 Vdc.
The continuous collector current (IC) is 100 mAdc.
The integrated bias resistor network has a nominal resistance of 10 kΩ.
The NSBC114EDXV6T5G is supplied in a SOT-563 package.
Yes, the NSBC114EDXV6T5G is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.