BAT54A/215
Nexperia USA Inc.
The Nexperia USA Inc. BAT54A/215 is a diode. It is RoHS3 Compliant and has an MSL rating of 1 Unlimited.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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84,000 pcs
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84000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Tape & Reel |
The NSBA143EMXWTBG is a single, pre-biased bipolar junction transistor (BJT) manufactured by On Semiconductor. This PNP transistor is designed for surface mount applications and comes in a compact 3-XDFNW (1x1) package.
Key electrical characteristics include a maximum collector-emitter breakdown voltage of 50V and a maximum power dissipation of 450mW. It integrates two resistors, R1 and R2, each with a nominal value of 4.7 kOhms, simplifying circuit design. The transistor exhibits a minimum DC current gain (hFE) of 15 at 5mA and 10V, with a maximum collector current of 100mA and a maximum collector cutoff current of 500nA.
The device is suitable for various applications requiring a pre-biased transistor configuration. Its surface mountable design with wettable flanks facilitates automated assembly processes. The component is specified with a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage is 50V.
It is a PNP - Pre-Biased transistor.
It has integrated resistors R1 (base) and R2 (emitter base) each with a nominal value of 4.7 kOhms.
The maximum power dissipation is 450mW.
It is a surface mount device with wettable flanks.
