| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
28,000 pcs
|
28000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5,100 pcs
|
5100 pcs | On Request | 1 | On Request | On Request | 2015 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Halogen Free | |
| Mounting Type | |
| Power | |
| Resistor | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The ON Semiconductor NSBA114YDXV6T1G is a dual PNP pre-biased transistor array designed to simplify circuit design and reduce board space. This device integrates two PNP transistors with monolithic bias resistor networks, eliminating the need for external components.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 50V and a continuous collector current (IC) of 100mA. It features a DC current gain (hFE) of 80 minimum at 5mA/10V and a Vce saturation of 250mV maximum at 300µA/10mA. The integrated resistors include a base-emitter resistor (R2) of 47kΩ.
This transistor array is housed in a SOT-563 surface mount package, making it suitable for space-constrained applications. The device is designed for ease of use, reducing component count and system cost. It is also specified as Pb-free and halogen-free.
Applications for this pre-biased transistor array include digital logic circuits, switching applications, and general-purpose amplification where integrated biasing simplifies design and reduces component count.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the NSBA114YDXV6T1G is 50 Vdc.
The continuous collector current (IC) rating for this device is 100 mAdc.
The NSBA114YDXV6T1G is supplied in a SOT-563 surface mount package.
The device includes an integrated base-emitter resistor (R2) with a value of 47kΩ.
The minimum DC current gain (hFE) is 80 at 5mA collector current and 10V collector-emitter voltage.
