| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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52,000 pcs
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52000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Halogen Free | |
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| Vce Saturation (Max) @ Ib, Ic | |
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The ON Semiconductor NSBA143ZDXV6T1G is a dual PNP bias resistor transistor designed to simplify circuit design by integrating a transistor with a monolithic bias network. This device eliminates the need for external resistors, reducing component count and board space.
Key electrical characteristics include a maximum collector-emitter voltage of 50Vdc and a continuous collector current of 100mAdc. It offers a minimum DC current gain (hFE) of 80 at 5mA and 10V, with a saturation voltage (Vce) of 250mV at 1mA and 10mA. The integrated base-emitter resistor has a nominal value of 47kΩ.
This transistor is supplied in a SOT-563 surface mount package, making it suitable for compact electronic designs. The device is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.
Features like simplified circuit design, reduced board space, and reduced component count make the NSBA143ZDXV6T1G a practical choice for various applications requiring integrated bias resistors.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 50 Vdc.
The continuous collector current is 100 mAdc.
The integrated base-emitter resistor value is 47 kΩ.
The NSBA143ZDXV6T1G is supplied in a SOT-563 package.
Yes, the NSBA143ZDXV6T1G is RoHS3 compliant.