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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10,000 pcs
|
10000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
6,251 pcs
|
6251 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Halogen Free | |
| Lead Temperature for Soldering | |
| Mounting Type | |
| Operating Temperature | |
| Operating Temperature (Unspecified condition) | |
| Pb-Free | |
| Power | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Supplier Device Package | |
| Thermal Resistance (@ Note 2) | |
| Thermal Resistance (Unspecified condition) | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| Voltage - Maximum | |
| current (Maximum @ Peak) |
The On Semiconductor NJVMJD45H11T4G is a PNP power transistor designed for general purpose power and switching applications, such as output or driver stages in switching regulators, converters, and power amplifiers.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 80V and a continuous collector current (IC) of 8A. It offers a peak collector current (ICM) of 16A and a maximum power dissipation (PD) of 20W at 25°C case temperature. The transistor has a DC current gain (hFE) of 60 minimum at 2A and 1V, and a Vce saturation of 1V maximum at 400mA and 8A.
This device is housed in a DPAK (TO-252-3) surface mount package, suitable for space-constrained applications. It operates within a temperature range of -55°C to 150°C (TJ). The transistor is Pb-Free and Halogen Free, complying with RoHS standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the NJVMJD45H11T4G is 80 Vdc.
The continuous collector current (IC) for this transistor is 8 Adc.
The operating and storage junction temperature range is -55°C to +150°C.
The NJVMJD45H11T4G is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.
Yes, the NJVMJD45H11T4G is RoHS3 Compliant.