NJVMJD44H11T4G The ON Semiconductor NJVMJD44H11T4G is an NPN bipolar junction transistor designed for general purpose power and switching applications. It features a high current capability and a DPAK surface mount package.
Mfr Part #:

NJVMJD44H11T4G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NJVMJD44H11T4G is an NPN bipolar junction transistor designed for general purpose power and switching applications. It features a high current capability and a DPAK surface mount package.
Total Stock: 1,077 pcs
$ Price Range: $0.99

NJVMJD44H11T4G Available from 1 distributor

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NJVMJD44H11T4G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector-Emitter Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
ESD Human Body Model
ESD Machine Model
Emitter-Base Voltage
Frequency
Halogen Free
Lead Temperature for Soldering
Mounting Type
Operating Temperature
Operating Temperature (Unspecified condition)
Pb-Free
Power
Power Dissipation (Maximum @ TC=25 °C)
Power Dissipation (Maximum) @ TA=25°C
Power Dissipation Derate (Maximum @ TA = 25 °C)
Power Dissipation Derate (Maximum @ TC = 25 °C)
Standard Package Quantity
Supplier Device Package
Thermal Resistance - Junction to Case
Thermal Resistance Junction-to-Ambient
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

NJVMJD44H11T4G Description

Short technical summary and product information.

The ON Semiconductor NJVMJD44H11T4G is an NPN power transistor designed for general purpose power and switching applications such as output or driver stages in switching regulators, converters, and power amplifiers. It offers a collector-emitter voltage of 80V and a continuous collector current of 8A, with a peak current capability of 16A.

 

This transistor has a maximum power dissipation of 20W at a case temperature of 25°C, and 1.75W at an ambient temperature of 25°C. It operates within a junction temperature range of -55°C to +150°C. The device is housed in a DPAK (TO-252-3, SC-63) surface mount package, making it suitable for space-constrained designs.

 

Key electrical characteristics include a DC current gain (hFE) of 60 minimum at 2A/1V and a Vce saturation of 1V maximum at 400mA/8A. It also features a frequency response up to 85MHz. The NJVMJD44H11T4G is Pb-free and Halogen-free, compliant with RoHS standards.

NJVMJD44H11T4G Quick Information

Product Type: NPN Power Transistor
Canonical Name: NJVMJD44H11T4G NPN Power Transistor
Subcategory: Single

NJVMJD44H11T4G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NJVMJD44H11T4G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NJVMJD44H11T4G Features

  • NPN bipolar junction transistor.
  • 80V collector-emitter voltage rating.
  • 8A continuous collector current.
  • 20W maximum power dissipation.
  • DPAK surface mount package.

NJVMJD44H11T4G Applications

  • Suitable for power switching applications.
  • Ideal for motor control circuits.
  • Used in high-current amplifier stages.
  • Applicable in switching regulators and converters.

NJVMJD44H11T4G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage of the NJVMJD44H11T4G?

The collector-emitter voltage is 80 Vdc.

What is the continuous collector current for this transistor?

The continuous collector current is 8 Adc.

What is the maximum power dissipation of the NJVMJD44H11T4G?

The maximum power dissipation is 20 W at TC = 25°C.

What is the operating temperature range?

The operating and storage junction temperature range is -55°C to +150°C.

What package type is the NJVMJD44H11T4G supplied in?

It is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.

Is the NJVMJD44H11T4G RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level is 1 Unlimited.

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