| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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9,275 pcs
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9275 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The On Semiconductor NJVMJD32CG is a single PNP bipolar junction transistor (BJT) suitable for various electronic applications. It is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, facilitating integration into compact circuit designs.
Key electrical specifications include a maximum collector-emitter breakdown voltage of 100V and a continuous collector current rating of 3A. The transistor exhibits a minimum DC current gain (hFE) of 10 at 3A and 4V, with a typical transition frequency of 3MHz. Its Vce saturation is a maximum of 1.2V at 375mA and 3A, and the collector cutoff current is a maximum of 50μA.
The operating temperature range for the NJVMJD32CG is from -65°C to 150°C (TJ). This wide temperature range makes it suitable for applications operating in diverse environmental conditions. The surface mount package type simplifies assembly processes, particularly in high-volume manufacturing.
This component is categorized under Single Bipolar Transistors within the Discrete Semiconductor Products group. Its specifications make it a viable option for power switching and amplification circuits where a PNP transistor is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter Breakdown Voltage for the NJVMJD32CG is 100V.
The maximum Collector Current (Ic) for the NJVMJD32CG is 3A.
The maximum power dissipation for the NJVMJD32CG is 1.56W.
The maximum Vce Saturation for the NJVMJD32CG is 1.2V, tested at Ib, Ic 375mA, 3A.
The minimum DC Current Gain (hFE) for the NJVMJD32CG is 10, tested at Ic, Vce 3A, 4V.
The typical Transition Frequency (fT) for the NJVMJD32CG is 3MHz.
The operating temperature range for the NJVMJD32CG is -65°C to 150°C.