NJVMJD32CG The On Semiconductor NJVMJD32CG is a PNP bipolar transistor designed for surface mount applications. It offers a 100V collector-emitter breakdown voltage and a 3A maximum collector current.
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NJVMJD32CG

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Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NJVMJD32CG is a PNP bipolar transistor designed for surface mount applications. It offers a 100V collector-emitter breakdown voltage and a 3A maximum collector current.
✓ Total Stock: 9,275 pcs
$ Price Range: $0.99

NJVMJD32CG Available from 1 distributor

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NJVMJD32CG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Manufacturer Name
Storage Temperature

NJVMJD32CG Description

Short technical summary and product information.

The On Semiconductor NJVMJD32CG is a single PNP bipolar junction transistor (BJT) suitable for various electronic applications. It is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, facilitating integration into compact circuit designs.

 

Key electrical specifications include a maximum collector-emitter breakdown voltage of 100V and a continuous collector current rating of 3A. The transistor exhibits a minimum DC current gain (hFE) of 10 at 3A and 4V, with a typical transition frequency of 3MHz. Its Vce saturation is a maximum of 1.2V at 375mA and 3A, and the collector cutoff current is a maximum of 50μA.

 

The operating temperature range for the NJVMJD32CG is from -65°C to 150°C (TJ). This wide temperature range makes it suitable for applications operating in diverse environmental conditions. The surface mount package type simplifies assembly processes, particularly in high-volume manufacturing.

 

This component is categorized under Single Bipolar Transistors within the Discrete Semiconductor Products group. Its specifications make it a viable option for power switching and amplification circuits where a PNP transistor is required.

NJVMJD32CG Quick Information

Product Type: PNP Bipolar Transistor
Series: MJD32C
Canonical Name: NJVMJD32CG PNP Bipolar Transistor
Subcategory: Bipolar (BJT) - Single

NJVMJD32CG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NJVMJD32CG Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NJVMJD32CG Features

  • PNP bipolar junction transistor.
  • 100V collector-emitter breakdown voltage.
  • 3A maximum continuous collector current.
  • Surface mount DPAK package.
  • Wide -65°C to 150°C operating temperature.

NJVMJD32CG Applications

  • Suitable for power switching circuits.
  • Used in amplification applications.
  • Ideal for compact PCB designs.
  • General purpose discrete component.

NJVMJD32CG FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum Collector-Emitter Breakdown Voltage of the NJVMJD32CG?

The maximum Collector-Emitter Breakdown Voltage for the NJVMJD32CG is 100V.

What is the maximum Collector Current for the NJVMJD32CG?

The maximum Collector Current (Ic) for the NJVMJD32CG is 3A.

What is the maximum power dissipation of the NJVMJD32CG?

The maximum power dissipation for the NJVMJD32CG is 1.56W.

What is the maximum Vce Saturation for the NJVMJD32CG?

The maximum Vce Saturation for the NJVMJD32CG is 1.2V, tested at Ib, Ic 375mA, 3A.

What is the minimum DC Current Gain (hFE) of the NJVMJD32CG?

The minimum DC Current Gain (hFE) for the NJVMJD32CG is 10, tested at Ic, Vce 3A, 4V.

What is the typical Transition Frequency of the NJVMJD32CG?

The typical Transition Frequency (fT) for the NJVMJD32CG is 3MHz.

What is the operating temperature range for the NJVMJD32CG?

The operating temperature range for the NJVMJD32CG is -65°C to 150°C.

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