| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
45,200 pcs
|
45200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Storage Temperature | |
| Tape & Reel |
The Renesas NESG270034 is an NPN Silicon Germanium (SiGe) RF transistor engineered for medium output power amplification, capable of delivering up to 2W.
This transistor features a Collector to Base Voltage (V CBO) of 25V and a maximum Collector Current (I C) of 750mA. Its Total Power Dissipation (P tot) is rated at 1.9W at 25°C, with a Junction Temperature (T j) up to 150°C. The device operates within a recommended Collector to Emitter Voltage (V CE) range of 6.0V to 7.2V and a Collector Current (I C) of 600mA to 750mA.
Key RF characteristics include a typical Linear Gain (G L) of 17.5 to 19.5 dB at 460 MHz and 15 dB at 900 MHz. It can achieve an output power (P out) of 33.5 dBm at 460 MHz and 31.5 dBm at 900 MHz under specified input conditions.
The NESG270034 is housed in a 3-pin power minimold package (34 PKG) suitable for surface mounting. It is supplied in a magazine case or on a reel for automated assembly.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector to base voltage (V CBO) is 25 V.
The maximum collector current (I C) is 750 mA.
The total power dissipation (P tot) is 1.9 W at 25°C.
The typical linear gain (G L) at 460 MHz is between 17.5 and 19.5 dB.
The typical output power (P out) is 33.5 dBm at 460 MHz.
The NESG270034 is supplied in a 3-pin power minimold (34 PKG) package.
The RoHS status is RoHS3 Compliant.