| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
475,789 pcs
|
475789 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Junction Temperature | |
| Mounting Type | |
| Noise Figure | |
| Storage Temperature | |
| Tape & Reel |
The Renesas NE202930 is a silicon NPN epitaxial high frequency transistor. It is ideal for low noise and low distortion amplification applications, particularly in equipment operating at low collector voltages (less than 5 V). This transistor is suitable for applications up to 1 GHz.
Key electrical characteristics include a high transition frequency (fT) of 11 GHz TYP. It provides an Insertion Power Gain of 11.5 dB minimum at 1 GHz and a Noise Figure as low as 1.15 dB typical at 1 GHz. The device also offers a Gain 1 dB Compression Output Power of -19 dBm typical and an Output 3rd Order Intercept Point of -32 dBm typical.
The NE202030 comes in a 3-pin super minimold package. It is designed for surface mounting and is supplied on tape and reel.
Applications include Low Noise Amplifiers (LNA) or power splitters for digital-TV.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The transition frequency (fT) of the NE202930 transistor is 11 GHz TYP.
The typical noise figure (NF1) for the NE202930 at 1 GHz is 1.15 dB.
The maximum collector current (IC) for the NE202930 is 100 mA.
The NE202930 transistor comes in a 3-pin super minimold package.
The NE202930 is ideal for low noise and low distortion amplification, such as in Low Noise Amplifiers (LNA) or power splitters for digital-TV.