2SC5338-T1
Renesas
The Renesas 2SC5338-T1 is an NPN Silicon RF Transistor designed for high-frequency, low-distortion amplification. It offers high gain and low distortion characteristics.
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200,000 pcs
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200000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The Renesas NESG2031M05 is an NPN Silicon Germanium (SiGe) RF transistor engineered for applications requiring low noise and high gain amplification at low currents. It is particularly well-suited for RF circuits where performance and efficiency are critical.
Key electrical characteristics include a typical noise figure (NF) of 0.8 dB at 2 GHz and a typical associated gain (Ga) of 17.0 dB at 2 GHz. The device also boasts a maximum stable power gain (MSG) of 21.5 dB TYP at 2 GHz. These specifications make it an ideal choice for demanding RF amplification tasks.
The NESG2031M05 comes in a flat-lead 4-pin thin-type super minimold (M05) package, designed for surface mounting. This package type facilitates integration into compact electronic designs. The transistor operates with a collector-emitter voltage (VCEO) of up to 5.0 V and a collector current (IC) of up to 35 mA.
This RF transistor is suitable for various high-frequency applications, including low-noise amplifiers (LNAs) and high-gain stages in communication systems, radar, and test equipment. Its SiGe technology provides superior performance compared to traditional silicon bipolar transistors.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector to emitter voltage (VCE) is 5.0 V.
The typical gain bandwidth product is 20 GHz at VCE=3V, IC=20mA.
The typical noise figure is 0.8 dB, with a maximum of 1.1 dB at VCE=2V, IC=5mA.
It uses an M05 surface-mount package with flat leads.
The maximum junction temperature is 150°C.
The DC current gain ranges from 130 to 260 at VCE=2V, IC=5mA.
Yes, it is supplied in tape and reel packaging.