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200,000 pcs
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200000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Renesas 2SC5338-T1 is an NPN Silicon RF Transistor specifically engineered for applications requiring high-frequency amplification with low distortion. It is housed in a 4-pin power minimold package.
This transistor features a typical insertion power gain of 10 dB at 1 GHz (VCE = 5 V, IC = 50 mA) and a gain bandwidth product of 6 GHz. It also exhibits low distortion characteristics, with a typical 2nd order intermodulation distortion of -55 dB and a 3rd order intermodulation distortion of -76 dB under specified conditions.
The absolute maximum ratings include a collector-emitter voltage of 12 V, a collector current of 150 mA, and a total power dissipation of 1.8 W when mounted on a ceramic substrate. The junction temperature is rated up to 150 °C.
This component is suitable for high-frequency amplifier circuits where gain and low distortion are critical design parameters.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical insertion power gain is 10 dB at 1 GHz.
The typical 2nd order intermodulation distortion is -55 dB, and the typical 3rd order intermodulation distortion is -76 dB.
The gain bandwidth product is 6 GHz.
The maximum collector current is 150 mA.
The total power dissipation is 1.8 W when mounted on a ceramic substrate.
It comes in a 4-pin power minimold package.