| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2 pcs
|
2 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type | |
| SVHC Present |
The CEL NE68518 is a surface-mount NPN silicon high-frequency transistor from the NE685 series. It is designed for low-cost, low-voltage, and low-current applications, making it suitable for portable wireless communications and cellular radio. This device offers a high gain bandwidth product of 12 GHz and a minimum noise figure of 1.5 dB at 2.0 GHz.
Key electrical characteristics include a typical forward current gain (hFE) ranging from 75 to 150 at VCE = 3V and IC = 10 mA. The maximum power dissipation is 150 mW, with a junction-to-ambient thermal resistance of 833 °C/W. The transistor is housed in an 18 package (SOT 343 style) and is intended for surface mounting.
This series is ideal for applications up to 2.4 GHz where low cost, high gain, low voltage, and low current are primary concerns. Note that some part numbers in this datasheet are not recommended for new designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.27 | $0.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The gain bandwidth product (fT) of the NE68518 transistor is 12 GHz at VCE = 3V and IC = 10 mA.
The minimum noise figure (NFMIN) for the NE68518 is 1.5 dB at VCE = 3 V and IC = 3 mA, with a frequency of 2.0 GHz.
The typical forward current gain (hFE) of the NE68518 is between 75 and 150 at VCE = 3 V and IC = 10 mA.
The NE68518 is available in the 18 package, which is a surface mount style.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.
