NCP5304DR2G
On Semiconductor
The On Semiconductor NCP5304DR2G is a high voltage gate driver designed for half-bridge configurations. It provides two outputs for driving N-channel MOSFETs or IGBTs.
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12,500 pcs
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12500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NCP5111DR2G is a half-bridge gate driver integrated circuit manufactured by onsemi. This device is designed to drive the high-side and low-side gates of a half-bridge power stage, making it suitable for a variety of power conversion applications.
Key electrical specifications include a maximum high voltage range of 600V, enabling operation in high-voltage systems. The driver offers a dV/dt immunity of 50 kV/µs, which provides robust performance against fast voltage transients, reducing the risk of false triggering in noisy environments.
The NCP5111DR2G is offered in a standard 8-pin SOIC package, which is suitable for surface-mount assembly and space-constrained designs. This gate driver is a functional building block for switch-mode power supplies, motor drives, and other inverter circuits.
| Qty | Low | High |
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| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NCP5111DR2G has a maximum high voltage range of 600V.
The NCP5111DR2G has a dV/dt immunity of 50 kV/µs.