| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,407 pcs
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1407 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| SVHC Present |
The NCE01P13K is a P-Channel Enhancement Mode Power MOSFET manufactured by NCE Power Semiconductor. It employs advanced trench technology and design principles to achieve superior RDS(ON) performance and minimal gate charge, making it suitable for a wide array of electronic applications.
This MOSFET is designed for efficient power switching and control. Its characteristics, including low gate charge, contribute to improved switching speeds and reduced power losses in circuits. The P-Channel configuration makes it ideal for applications requiring a high-side switch or specific load control scenarios.
While specific electrical and mechanical details such as breakdown voltage, continuous drain current, and package type are not fully detailed in the available data, the NCE01P13K is presented as a versatile component for power management solutions. Its compliance with RoHS3 standards indicates a commitment to environmental regulations in electronic manufacturing.
The NCE01P13K MOSFET has a maximum RDS(ON) of 13 mOhm when tested at VGS = -10V and ID = -13A.
The NCE01P13K is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the NCE01P13K is 1 Unlimited.
The REACH status for the NCE01P13K is REACH Unaffected.
