NSVMUN5213DW1T3G
On Semiconductor
The On Semiconductor NSVMUN5213DW1T3G is a dual NPN pre-biased transistor. It features a 50V collector-emitter voltage and 100mA continuous collector current.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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67,020 pcs
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67020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
67,020 pcs
|
67020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Halogen Free | |
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| Resistor | |
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| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The MUN5233DW1T1G from ON Semiconductor is a Dual NPN Bias Resistor Transistor (BRT) designed to simplify circuit design by integrating a transistor with a monolithic bias network. This device replaces a single transistor and its external resistors, reducing component count and board space.
Key electrical specifications include a maximum collector-emitter voltage of 50Vdc and a continuous collector current of 100mAdc. It features a DC current gain (hFE) of 80 minimum at 5mA/10V and a saturation voltage of 250mV maximum at 1mA/10mA. The integrated resistors have a nominal value of 47kΩ. The device has a power dissipation rating of 250mW.
This transistor array is housed in a 6-TSSOP, SC-88, SOT-363 package, suitable for surface mounting. The datasheet indicates it is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant. The part is also qualified for automotive applications with an AEC-Q101 rating and PPAP capability.
The use of BRTs like the MUN5233DW1T1G can lead to reduced system costs and smaller overall footprints in electronic designs.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 50 Vdc.
The continuous collector current is 100 mAdc.
The device is supplied in a SOT-363 package.
Yes, the device is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
The integrated resistors are R1 = 4.7 kΩ and R2 = 47 kΩ.