Mfr Part #:

NSVMUN5213DW1T3G

The On Semiconductor NSVMUN5213DW1T3G is a dual NPN pre-biased transistor. It features a 50V collector-emitter voltage and 100mA continuous collector current.

✓ Total Stock: 50,000 pcs

$ Price Range: $0.99

NSVMUN5213DW1T3G Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	50,000 pcs On Request	50000 pcs	On Request	1	On Request	On Request	20+	On Request	On Request

NSVMUN5213DW1T3G Description

Short technical summary and product information.

The NSVMUN5213DW1T3G from On Semiconductor is a dual NPN bias resistor transistor (BRT). This integrated device replaces a single transistor and its external bias resistors, simplifying circuit design and reducing board space. It operates with a collector-emitter voltage of up to 50V and can handle a continuous collector current of 100mA.

The transistor type is 2 NPN - Pre-Biased (Dual), with a DC current gain (hFE) of 80 minimum at 5mA collector current and 10V Vce. The Vce saturation is a maximum of 250mV at 300µA base current and 10mA collector current. It includes integrated bias resistors with a nominal value of 47kΩ.

This component is supplied in a surface mount SC-88/SC70-6/SOT-363 package. The device is Pb-Free and Halogen Free compliant. Thermal considerations include a maximum power dissipation of 187mW (one junction heated) or 250mW (both junctions heated) at 25°C ambient temperature for the SOT-363 package.

NSVMUN5213DW1T3G Quick Information

Product Type: Transistor

Canonical Name: Dual NPN Bias Resistor Transistor

Subcategory: Pre-Biased Transistor Array

NSVMUN5213DW1T3G Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

NSVMUN5213DW1T3G Estimated Pricing

Qty	Low	High
1+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSVMUN5213DW1T3G Features

Dual NPN pre-biased transistor design.
50V collector-emitter voltage rating.
100mA continuous collector current.
Integrated 47kΩ bias resistors.
Surface mount SC-88/SOT-363 package.

NSVMUN5213DW1T3G Applications

Suitable for switching and amplification circuits.
Used in automotive and industrial electronic systems.
Ideal for low-voltage signal switching applications.
Applicable in power management and control modules.

NSVMUN5213DW1T3G FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum collector-emitter voltage for the NSVMUN5213DW1T3G?

The maximum collector-emitter voltage (Vceo) is 50 Vdc.

What is the continuous collector current rating?

The continuous collector current (Ic) is 100 mAdc.

What type of package is the NSVMUN5213DW1T3G supplied in?

It is supplied in an SC-88/SC70-6/SOT-363 package.

What is the mounting type for this transistor?

The mounting type is Surface Mount.

What is the integrated bias resistor value?

The integrated bias resistors have a nominal value of 47kΩ.

What is the minimum DC current gain (hFE)?

The minimum DC current gain (hFE) is 80 at 5mA collector current and 10V Vce.

What is the maximum Vce saturation voltage?

The Vce saturation is a maximum of 250mV at 300µA base current and 10mA collector current.