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MUN5112T1G The On Semiconductor MUN5112T1G is a PNP Pre-Biased Transistor with a 50V collector-emitter voltage and 100mA continuous collector current. It is supplied in a compact SC-70-3 package.
Mfr Part #:

MUN5112T1G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor MUN5112T1G is a PNP Pre-Biased Transistor with a 50V collector-emitter voltage and 100mA continuous collector current. It is supplied in a compact SC-70-3 package.
✓ Total Stock: 5,900 pcs
$ Price Range: $0.99

MUN5112T1G Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
3,000 pcs
On Request
3000 pcs On Request 1 On Request On Request 1735+ On Request On Request
Flip Electronics ✓
Non-Authorised Inventory information
2,900 pcs
On Request
2900 pcs On Request 1 On Request On Request On Request On Request On Request
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MUN5112T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Lead Spacing
Mounting Type
Power
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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MUN5112T1G Description

Short technical summary and product information.

The MUN5112T1G from On Semiconductor is a PNP type digital transistor featuring a monolithic bias resistor network. This integration simplifies circuit design, reduces board space, and lowers component count.

 

Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50V and a continuous collector current (IC) of 100mA. The device has a maximum power dissipation of 202mW. It also features a minimum DC current gain (hFE) of 60 at 5mA and 10V, and a Vce saturation of 250mV at 300µA and 10mA.

 

The transistor incorporates internal resistors with nominal values of 22 kΩ for both R1 (base) and R2 (emitter base). The input forward voltage is rated at 40Vdc, and the input reverse voltage is 10Vdc.

 

This component is designed for surface mounting and comes in an SC-70-3 (SOT323) package. It is Pb-Free and Halogen Free, with a RoHS3 compliant status. The Moisture Sensitivity Level (MSL) is 1.

MUN5112T1G Quick Information

Product Type: Transistor
Canonical Name: PNP Pre-Biased Transistor
Subcategory: Single, Pre-Biased

MUN5112T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MUN5112T1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MUN5112T1G Features

  • PNP Pre-Biased Transistor with integrated resistors.
  • Maximum 50V collector-emitter voltage.
  • Continuous collector current of 100mA.
  • Surface mount SC-70-3 (SOT323) package.
  • Pb-Free and Halogen Free compliance.

MUN5112T1G Applications

  • Ideal for digital logic circuits.
  • Suitable for signal switching applications.
  • Used in portable electronic devices.
  • Simplifies circuit board design.

MUN5112T1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MUN5112T1G?

The maximum collector-emitter voltage (VCEO) for the MUN5112T1G is 50 Vdc.

What is the continuous collector current rating of the MUN5112T1G?

The continuous collector current (IC) for the MUN5112T1G is 100 mAdc.

What is the package type for the MUN5112T1G transistor?

The MUN5112T1G is supplied in an SC-70-3 (SOT323) package, suitable for surface mounting.

What are the internal resistor values in the MUN5112T1G?

The MUN5112T1G has internal resistors R1 and R2, both with a nominal value of 22 kΩ.

Is the MUN5112T1G RoHS compliant?

Yes, the MUN5112T1G is RoHS3 Compliant.

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