| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
13 pcs
|
13 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Operating Temperature | |
| Power Dissipation |
The MTM2N90 is a Power MOSFET from Motorola Semiconductor, designed for various electronic applications. This component offers a minimum breakdown voltage of 900V, ensuring robust performance in high-voltage scenarios. It has a maximum power dissipation rating of 75W, making it suitable for power handling tasks.
The operating temperature range extends up to 150°C, allowing for reliable operation in demanding thermal environments. The Drain-Source On Resistance is specified at a minimum of 8Ω. This MOSFET is RoHS3 compliant, indicating adherence to environmental standards.
As a Power MOSFET, the MTM2N90 is utilized in switching and amplification circuits where efficient power control is essential. Its specifications suggest suitability for applications requiring high voltage capability and moderate power handling.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source resistance of the MTM2N90 is 8Ω.
The breakdown voltage of the MTM2N90 is 900V.
The maximum power dissipation of the MTM2N90 is 75W.
The operating temperature of the MTM2N90 is 150°C.
RoHS compliance status is unverified.