| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
| On Request | On Request | 5 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Operating Temperature | |
| Power Dissipation | |
| Storage Temperature | |
| Tape & Reel |
The BUZ21 is an N-Channel Power Field-Effect Transistor manufactured by STMicroelectronics. It is designed for power switching applications and offers a breakdown voltage of 100V.
Key electrical specifications include a minimum drain-source on-resistance of 0.085 ohms and a maximum power dissipation of 75W. The device operates at a maximum temperature of 150°C.
This MOSFET is suitable for various power control and switching circuits where robust performance and high voltage handling are required. Its N-Channel silicon construction ensures efficient operation in demanding environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BUZ21 has a breakdown voltage of 100V.
The drain-source resistance of the BUZ21 is 0.085Ω.
The maximum operating temperature of the BUZ21 is 150°C.
The BUZ21 has a maximum power dissipation of 75W.
The BUZ21 has three terminals.