| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
50 pcs
|
50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Operating Temperature | |
| Power Dissipation |
The MTM2N90 is a Power MOSFET manufactured by SEMICONDUCTEUR TECH. INC. This component features a minimum breakdown voltage of 900V and a minimum drain-source resistance of 8Ω. It is designed for applications requiring high voltage handling capabilities.
The device has a maximum power dissipation of 75W and can operate at temperatures up to 150°C. The MTM2N90 is suitable for various power switching and amplification circuits where robust performance is essential.
This MOSFET is part of the Transistors - FETs, MOSFETs - Arrays category. Its specifications make it a reliable choice for demanding electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage of the MTM2N90 is 900V.
The drain-source resistance of the MTM2N90 is 8Ω.
The maximum operating temperature of the MTM2N90 is 150°C.
The maximum power dissipation of the MTM2N90 is 75W.
RoHS compliance status is unverified.