| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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17 pcs
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17 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
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| Tape & Reel |
The BTS130 from Siemens Semiconductor Group is an N-Channel MOSFET designed for various electronic applications. It features a minimum breakdown voltage of 50V and a maximum power dissipation of 75W. The drain-source on-resistance is specified as 50mΩ minimum.
This MOSFET operates at a maximum temperature of 150°C and has 3 terminals. It is packaged in a TO-220AB case and is suitable for through-hole mounting.
Key electrical characteristics include a 50V breakdown voltage and 75W power dissipation, making it suitable for power switching applications. The low drain-source on-resistance of 50mΩ contributes to efficient operation.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BTS130 MOSFET has a minimum breakdown voltage of 50V.
The maximum power dissipation for the BTS130 is 75W.
The BTS130 has a minimum drain-source resistance of 50mΩ.
The BTS130 can operate at a maximum temperature of 150°C.
The BTS130 MOSFET is supplied in a TO-220AB package.