TMBT3906.LMT
Toshiba
The Toshiba TMBT3906.LMT is a single bipolar junction transistor (BJT) in the Transistors - Bipolar (BJT) - Single category. It is RoHS3 Compliant and has an MSL rating of 1 Unlimited.
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559 pcs
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559 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MTD20N06HDT4 from On Semiconductor is a high-performance N-Channel Power MOSFET. It is rated for a maximum drain-source voltage (Vds) of 60V and can handle a continuous drain current (Id) of 20A at 25°C.
This MOSFET features a low on-resistance (Rds On) of 45mΩ maximum at 10A and 10V gate-source voltage, ensuring efficient power transfer. The typical gate threshold voltage (Vgs(th)) is 4V at 250µA, and the typical gate charge (Qg) is 24nC at 48V.
Packaged in a TO-252-3, DPak surface mount configuration, the MTD20N06HDT4 is suitable for applications requiring compact and reliable power switching. It operates within a temperature range of -55°C to 150°C.
Key electrical characteristics include a maximum gate-source voltage of ±20V and an input capacitance (Ciss) of 840pF at 25V. The device has a power dissipation rating of 40W at 25°C.
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| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the MTD20N06HDT4 is 60V.
The continuous drain current (Id) for the MTD20N06HDT4 is 20A at 25°C.
The Rds On is a maximum of 45mΩ at 10A and 10V.
The typical gate threshold voltage (Vgs(th)) is 4V at 250µA.
The operating temperature range is -55°C to 150°C.
It is supplied in a TO-252-3, DPak (2 leads + tab), SC-63 package.